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| Product Description Sirenza Microdevices' SNA-200 is a GaAs monolithic broadband amplifier (MMIC) in die form. At 1950 MHz, this amplifier provides 15.5dB and 13.8dB at 6000 MHz. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.350m x 0.345mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-200 is 100% DC tested and sample tested for RF performance. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-200 is supplied in gel paks at 100 devices per pak. Also available in packaged form (SNA-276 & SNA-286) Output Power vs. Frequency 14 13 SNA-200S DC-6.5 GHz, Cascadable GaAs HBT MMIC Amplifier Product Features * Cascadable 50 Ohm Gain Block * 15.5dB Gain, +12dBm P1dB * 1.5:1 Input and Output VSWR * Operates From Single Supply * Through wafer via for ground Applications * Broadband Driver Amplifier * IF Amplifier or gain stage for VSAT, LMDS, WLAN, and Cellular Systems dBm 12 11 10 0.5 1 1.5 2 4 6 8 10 GHz Symbol Gp Parameter Small Signal Power Gain [2] Units dB dB dB dB dB GHz dBm dBm dBm dBm dB dB dB V mA dB/C C/W Frequency 850 MHz 1950 MHz 2400 MHz 6000 MHz 0.1-4.0 GHz 1950 MHz 6000 MHz 1950 MHz 6000 MHz 1950 MHz 1950 0.1-7.0 GHz Min. 13.5 12.3 Typ. 15.5 15.0 15.0 13.8 +/- 1.0 7 12.0 12.2 25.0 24.5 5.5 12.9 20 3.6 40 -0.0018 270 Max. 16.5 15.3 GF Gain Ripple BW3dB 3dB Bandwidth P1dB OIP 3 NF RL ISOL VD ID dG/dT RTH , j-b Output Power at 1dB Compression [2] Output Third Order Intercept Point [2] Noise Figure Input / Output Return Loss Reverse Isolation Device Operating Voltage [1] Device Operating Current [1] Device Gain Temperature Coefficient Thermal Resistance (junction to backside) 10 10.2 22 21.5 3.1 35 4.1 45 VS = 8 V Test Conditions: R = 110 Ohms BIAS ID = 40 mA Typ. OIP3 Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm TL = 25C, ZS = ZL = 50 Ohms, [1] 100% DC Tested, [2] Sample Tested The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103300 Rev B Preliminary SNA-200S DC-6.5 GHz Cascadable MMIC Amplifier Typical Performance at 25 C (Vds =3.8V, Ids = 40mA) (data includes bond wires) |S11| vs. Frequency 0 -5 |S21| vs. Frequency 16 15 dB -10 dB 14 -15 13 -20 0.5 1 1.5 2 4 6 8 10 12 0.5 1 1.5 2 4 6 8 10 GHz GHz |S12| vs. Frequency 0 -5 -10 -15 |S22| vs. Frequency 0 -5 dB dB -10 -15 -20 -25 0.5 1 1.5 2 4 6 8 10 -20 0.5 1 1.5 2 4 6 8 10 GHz GHz Noise Figure vs. Frequency 8 7.5 7 26 27 TOIP vs. Frequency dB 6.5 6 5.5 5 0.1 0.5 1 1.5 2 4 6 8 10 dBm 25 24 23 0.5 1 1.5 2 4 6 8 10 GHz GHz Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 70 mA 6V +20 dBm +200C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l 303 South Technology Court Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103300 Rev B Preliminary SNA-200S DC-6.5 GHz Cascadable MMIC Amplifier Application Circuit Element Values Frequency (Mhz) 500 850 1950 2400 3500 Typical Application Circuit R BIAS 1 uF 1000 pF Reference Designator CB CD 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH CD LC LC Recommended Bias Resistor Values for ID = 40mA RBIAS = (VS - VD) / ID Supply Voltage (VS) 6V 60 8V 110 10V 160 12V 210 RBIAS RF in CB 1 4 SNA-200 3 CB RF out Note: RBIAS provides DC bias stability over temperature. 2 GND VIA Die Thickness - 0.004 [0.1] Dimensions - inches [mm] RFIN RFOUT Suggested Bonding Arrangement (above configuration used for S-parameter data) Simplified Schematic of MMIC For recommended handling, die attach, and bonding methods, see the following application note at www.sirenza.com. AN-041 (PDF) Handling of Unpackaged Die Part Number Ordering Information Part Number Gel Pack 1 0 0 p cs. p e r p a ck Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. SNA-200S Die are shipped per Sirenza application note AN-039 Visual Criteria For Unpackaged Die 303 South Technology Court Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103300 Rev B |
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